Fairchild FQA9P25 MOSFET 250V P型沟道场效应晶体管 QFET

Width: 5 mm

Height: 20.1 mm

Length: 16.2 mm

Fall Time: 65 ns

Rise Time: 150 ns

Technology: Si

Unit Weight: 4.600 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Qg - Gate Charge: 38 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 150 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 45 ns

Id - Continuous Drain Current: 10.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6.1 S

Rds On - Drain-Source Resistance: 620 mOhms

Vds - Drain-Source Breakdown Voltage: 250 V

Vgs th - Gate-Source Threshold Voltage: 5 V