Fairchild FQPF33N10 MOSFET 100V N沟道 QFET

Width: 4.9 mm

Height: 16.07 mm

Length: 10.36 mm

Fall Time: 110 ns

Rise Time: 195 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 51 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 41 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 80 ns

Id - Continuous Drain Current: 18 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 20 S

Rds On - Drain-Source Resistance: 52 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2 V