Technology: Si
Unit Weight: 201 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Drain-Source Current at Vgs=0: 20 mA
Vgs - Gate-Source Breakdown Voltage: - 35 V
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Technology: Si
Unit Weight: 201 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Drain-Source Current at Vgs=0: 20 mA
Vgs - Gate-Source Breakdown Voltage: - 35 V
直接联系认证专家