快速支持
直接联系认证专家
Technology: Si
Unit Weight: 201 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 625 mW
Gate-Source Cutoff Voltage: - 3 V
Operating Temperature Range: - 55 C to + 150 C
Drain-Source Current at Vgs=0: 2 mA to 9 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 100 Ohms
Vgs - Gate-Source Breakdown Voltage: - 35 V