Fairchild KSD363RTU 双极型晶体管 NPN 外延硅

Width: 4.7 mm

Height: 9.4 mm

Length: 10.1 mm

Technology: Si

Unit Weight: 1.800 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 40 W

Gain Bandwidth Product fT: 10 MHz

Emitter- Base Voltage VEBO: 8 V

Collector- Base Voltage VCBO: 300 V

Maximum DC Collector Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 1 V