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Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 350 mW
Gate-Source Cutoff Voltage: - 2.7 V
Operating Temperature Range: - 55 C to + 150 C
Drain-Source Current at Vgs=0: 10 mA to 40 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.0075 S to 0.015 S
Vgs - Gate-Source Breakdown Voltage: - 40 V
