Fairchild MMBF5457 JFET N沟道晶体管 通用型

Technology: Si

Unit Weight: 40 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 350 mW

Gate-Source Cutoff Voltage: - 6 V

Operating Temperature Range: - 55 C to + 150 C

Drain-Source Current at Vgs=0: 2 mA to 6.5 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.001 S to 0.005 S

Vgs - Gate-Source Breakdown Voltage: - 25 V