Fairchild MMBFJ112 JFET N沟道开关

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 350 mW

Gate-Source Cutoff Voltage: - 5 V

Maximum Drain Gate Voltage: 35 V

Operating Temperature Range: - 55 C to + 150 C

Id - Continuous Drain Current: 5 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 50 Ohms

Vgs - Gate-Source Breakdown Voltage: - 35 V