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Width: 1.3 mm
Height: 0.93 mm
Length: 2.92 mm
Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 2 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 225 mW
DC Current Gain hFE Max: 250
Gain Bandwidth Product fT: 2000 MHz
Emitter- Base Voltage VEBO: 2.5 V
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: 50 mA
Maximum DC Collector Current: 50 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 25
Collector- Emitter Voltage VCEO Max: 12 V
