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Width: 1.3 mm
Height: 0.93 mm
Length: 2.92 mm
Technology: Si
Unit Weight: 35 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 600 MHz
Transistor Polarity: PNP
Pd - Power Dissipation: 225 mW
DC Current Gain hFE Max: 60 at 5 mA at 10 V
Gain Bandwidth Product fT: 600 MHz (Min)
Emitter- Base Voltage VEBO: 3 V
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: 50 mA
Maximum DC Collector Current: 50 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 60
Collector- Emitter Voltage VCEO Max: 20 V
