Fairchild NDP6060L MOSFET N沟 LL FET 增强型

Width: 4.7 mm

Height: 16.3 mm

Length: 10.67 mm

Fall Time: 161 ns

Rise Time: 320 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 60 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 49 ns

Id - Continuous Drain Current: 48 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 25 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1 V