Fairchild NZT660 双极型晶体管 PNP 晶体管 低饱和

Width: 3.56 mm

Height: 1.6 mm

Length: 6.5 mm

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 75 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 550 mV