Fairchild RFD3055LESM9A MOSFET 功率MOSFET

Width: 6.22 mm

Height: 2.39 mm

Length: 6.73 mm

Fall Time: 39 ns

Rise Time: 105 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 11.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 38 W

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 22 ns

Id - Continuous Drain Current: 11 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 107 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1 V