Vishay General Semiconductor IRF9Z34PBF MOSFETs TO220 P 通道 60V

Width: 4.7 mm

Height: 15.49 mm

Length: 10.41 mm

Fall Time: 58 ns

Rise Time: 120 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Qg - Gate Charge: 34 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 88 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 18 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 18 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 140 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 4 V