Vishay General Semiconductor IRF9Z34SPBF MOSFET P沟道 60V 18安培

Width: 9.65 mm

Height: 4.83 mm

Length: 10.67 mm

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 34 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 88 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 18 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 140 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 4 V