Vishay General Semiconductor SI1926DL-T1-E3 MOSFETs 60V Vds 20V Vgs SC70-6

Width: 1.25 mm

Height: 1 mm

Length: 2.1 mm

Fall Time: 14 ns

Rise Time: 12 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 900 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 510 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6.5 ns

Typical Turn-Off Delay Time: 13 ns

Id - Continuous Drain Current: 370 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 159 mS

Rds On - Drain-Source Resistance: 1.4 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1 V