Vishay General Semiconductor SI3429EDV-T1-GE3 MOSFETs -20V Vds 8V Vgs TSOP-6

Technology: Si

Unit Weight: 20 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 118 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 4.2 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 38 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V