Vishay General Semiconductor SI3493BDV-T1-E3 MOSFETs 20V 8.0A 2.97W 27.5毫欧 @ 4.5V

Fall Time: 84 ns

Rise Time: 72 ns

Technology: Si

Unit Weight: 20 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 43.5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2.97 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 22 ns

Typical Turn-Off Delay Time: 75 ns

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 24.3 S

Rds On - Drain-Source Resistance: 27.5 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 900 mV