Vishay General Semiconductor SI4425DDY-T1-GE3 MOSFETs -30V Vds 20V Vgs SO-8

Fall Time: 9 ns

Rise Time: 9 ns

Technology: Si

Unit Weight: 750 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 53 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 5.7 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 42 ns

Id - Continuous Drain Current: 19.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 40 S

Rds On - Drain-Source Resistance: 9.8 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V