Vishay General Semiconductor SI5908DC-T1-E3 MOSFETs 20V Vds 8V Vgs 1206-8 ChipFET

Technology: Si

Unit Weight: 85 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 7.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.1 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 5.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 40 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV