Vishay General Semiconductor SI7108DN-T1-GE3 MOSFET 20V 22A 3.8W 4.9毫欧 @ 10V

Fall Time: 10 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 20 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.8 W

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 22 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 88 S

Rds On - Drain-Source Resistance: 4.9 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 2 V