Vishay General Semiconductor SIHD7N60ET4-GE3 MOSFETs 600V Vds E系列 DPAK TO-252

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: MOSFET

Qg - Gate Charge: 40 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 78 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 24 ns

Id - Continuous Drain Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 600 mOhms

Vds - Drain-Source Breakdown Voltage: 609 V

Vgs th - Gate-Source Threshold Voltage: 2 V