Vishay General Semiconductor SISA35DN-T1-GE3 MOSFET P型沟道 30V (D-S) PowerPAK 1212-8

Fall Time: 16 ns

Rise Time: 30 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 28 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 24 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 26 ns

Typical Turn-Off Delay Time: 21 ns

Id - Continuous Drain Current: 16 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 25 S

Rds On - Drain-Source Resistance: 19 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.2 V