GeneSiC G3R45MT17D SiC MOSFET 1700V 45mohm TO-247-3 G3R SiC MOSFET

Fall Time: 53 ns

Rise Time: 32 ns

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 106 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 364 W

Vgs - Gate-Source Voltage: - 5 V, + 15 V

Typical Turn-On Delay Time: 70 ns

Typical Turn-Off Delay Time: 31 ns

Id - Continuous Drain Current: 52 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 17.1 S

Rds On - Drain-Source Resistance: 45 mOhms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 2.7 V