GeneSiC G3R60MT07D SiC MOSFET 750V 60mohm TO-247-3 G3R SiC MOSFET

Technology: SiC

Unit Weight: 6.100 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 47 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 171 W

Vgs - Gate-Source Voltage: - 5 V, + 15 V

Id - Continuous Drain Current: 43 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 60 mOhms

Vds - Drain-Source Breakdown Voltage: 750 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V