GSI Technology GS73024AB-12 SRAM芯片 异步 单电压3.3V 3M位 128K x 24位 12纳秒 119针 F-BGA 托盘
ModelGS73024AB-12
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Density: 3 Mbit
Package: 119F-BGA
Mounting: Surface Mount
Rad Hard: No
MSL Level: MSL 3 - 168 hours
Pin Count: 119
Lead Finish: Tin-Lead
No. of Pins: 119
Timing Type: Asynchronous
Memory Density: 3 Mbit
Number of Ports: 1
Number of Words: 128 kWords
Screening Level: Commercial
Supplier Package: FBGA
Address Bus Width: 17 Bit
Product Dimensions: 22 x 14 x 1.26 mm
Supply Voltage Max: 3.6 V
Supply Voltage Min: 3 V
Supply Voltage Nom: 3.3 V
Number of I/O Lines: 24 Bit
Operating Temperature: 0 to 70 °C
Number of Bits per Word: 24 Bit
Maximum Operating Current: 170 mA
Operating Temperature Max: 70 °C
Operating Temperature Min: 0 °C
Maximum Random Access Time: 12 ns
Typical Operating Supply Voltage: 3.3000 V
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