GSI Technology GS78116AB-12 SRAM芯片 异步 单电压3.3V 8M位 512K x 16 12纳秒 119针 F-BGA 托盘

Density: 8 Mbit

Package: 119F-BGA

Mounting: Surface Mount

Rad Hard: No

MSL Level: MSL 3 - 168 hours

Pin Count: 119

Lead Finish: Tin-Lead

No. of Pins: 119

Timing Type: Asynchronous

Memory Density: 8 Mbit

Number of Ports: 1

Number of Words: 512 kWords

Screening Level: Commercial

Supplier Package: FBGA

Address Bus Width: 19 Bit

Product Dimensions: 22 x 14 x 1.49 mm

Supply Voltage Max: 3.6 V

Supply Voltage Min: 3 V

Supply Voltage Nom: 3.3 V

Number of I/O Lines: 16 Bit

Operating Temperature: 0 to 70 °C

Number of Bits per Word: 16 Bit

Maximum Operating Current: 115 mA

Operating Temperature Max: 70 °C

Operating Temperature Min: 0 °C

Maximum Random Access Time: 12 ns

Typical Operating Supply Voltage: 3.3000 V

Datasheet