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Vgs(th): 2.4 V
Vgs (Max): 10V
Gate Charge (Qg): 4.3nC
Power consumption: 50W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 55V
Input Capacitance (Ciss): 290pF
Operating temperature range: -55 to 225C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 400mOhm
Drive Voltage (Max Rds On, Min Rds On): 5V
