Infineon BFP 196W H6327 射频双极小信号射频双极晶体管

Technology: Si

Unit Weight: 6.700 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Transistor Polarity: NPN

Pd - Power Dissipation: 700 mW

DC Current Gain hFE Max: 140

Gain Bandwidth Product fT: 7.5 GHz

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 150 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 12 V