Infineon BFP 450 H6327 射频双极小信号射频双极晶体管

Technology: Si

Unit Weight: 6 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 24 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 450 mW

Emitter- Base Voltage VEBO: 1.5 V

Continuous Collector Current: 10 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 15 V