Infineon BFP 720ESD H6327 射频硅锗射频双极晶体管

Technology: SiGe

Unit Weight: 7 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 43 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 100 mW

Continuous Collector Current: 30 mA

DC Collector/Base Gain hfe Min: 160

Collector- Emitter Voltage VCEO Max: 4.2 V