Infineon BFR 183 E6327 射频双极小信号NPN射频晶体管 12V 65mA 450mW

Width: 1.3 mm

Height: 1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 33 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 8 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 450 mW

DC Current Gain hFE Max: 70 at 15 mA at 8 V

Emitter- Base Voltage VEBO: 2 V

Collector- Base Voltage VCBO: 20 V

Maximum DC Collector Current: 65 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 12 V