Infineon BFR 35AP E6327 射频双极小信号NPN硅射频晶体管

Width: 1.3 mm

Height: 1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 5 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 280 mW

DC Current Gain hFE Max: 70 at 15 mA at 8 V

Emitter- Base Voltage VEBO: 2.5 V

Collector- Base Voltage VCBO: 20 V

Maximum DC Collector Current: 45 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 15 V