Infineon BSC028N06LS3 G MOSFET N沟道 60V 100A TDSON-8 OptiMOS 3

Width: 5.15 mm

Height: 1.27 mm

Length: 5.9 mm

Fall Time: 19 ns

Rise Time: 17 ns

Technology: Si

Unit Weight: 100 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 175 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 139 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 19 ns

Typical Turn-Off Delay Time: 77 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 60 S

Rds On - Drain-Source Resistance: 2.3 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V