Infineon BSM25GD120DN2 IGBT 硅模块 1200V 25A FL 桥式

Width: 45 mm

Height: 17 mm

Length: 107.5 mm

Technology: Si

Unit Weight: 180 g

Configuration: Full Bridge

Mounting Style: Screw Mount

Pd - Power Dissipation: 200 W

Gate-Emitter Leakage Current: 180 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 35 A