Infineon BSM50GP120 IGBT 硅模块 1200V 50A PIM

Width: 62 mm

Height: 17 mm

Length: 122 mm

Technology: Si

Unit Weight: 386.175 g

Configuration: Full Bridge

Mounting Style: Screw Mount

Pd - Power Dissipation: 360 W

Gate-Emitter Leakage Current: 300 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 50 A