Infineon BSS606N H6327 MOSFET 小信号 N沟 60V 2.3A SOT-89-3

Width: 2.5 mm

Height: 1.5 mm

Length: 4.5 mm

Fall Time: 2.1 ns

Rise Time: 2.6 ns

Technology: Si

Unit Weight: 130.500 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 3.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5.6 ns

Typical Turn-Off Delay Time: 13 ns

Id - Continuous Drain Current: 3.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6 S

Rds On - Drain-Source Resistance: 60 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V