Infineon BSZ240N12NS3 G MOSFETs N沟道 120V 37A TSDSON-8 OptiMOS 3

Width: 3.3 mm

Height: 1.1 mm

Length: 3.3 mm

Fall Time: 4 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 38.760 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 20 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 66 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 13 ns

Id - Continuous Drain Current: 37 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 15 S

Rds On - Drain-Source Resistance: 21 mOhms

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: 3 V