Infineon DF23MR12W1M1B11BPSA1 碳化硅功率MOSFET 低功率 易用

Fall Time: 12.8 ns

Rise Time: 7.2 ns

Technology: Si

Unit Weight: 24 g

Configuration: Dual

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Vf - Forward Voltage: 4.6 V

Vr - Reverse Voltage: 1.2 kV

Vgs - Gate-Source Voltage: + 5.55 V

Typical Turn-On Delay Time: 11.3 ns

Typical Turn-Off Delay Time: 38.5 ns

Id - Continuous Drain Current: 25 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 66 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.45 V