Infineon F3L400R07ME4_B22 IGBT模块 IGBT模块 400A 650V
制造商Infineon(查看更多该品牌的产品)
ModelF3L400R07ME4_B22
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Technology: Si
Unit Weight: 345 g
REACH - SVHC: Details
Configuration: Half Bridge
Pd - Power Dissipation: 1.15 kW
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.55 V
Continuous Collector Current at 25 C: 450 A
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