Infineon FD800R45KL3KB5NPSA1 IGBT 硅模块 4500 V，800 A 斩波器 IGBT 模块
制造商Infineon(查看更多该品牌的产品)
ModelFD800R45KL3KB5NPSA1
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Technology: Si
Configuration: Single
Pd - Power Dissipation: 1.6 MW
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 50 C
Collector- Emitter Voltage VCEO Max: 4.5 kV
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 800 A
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