Infineon FF300R12KS4 IGBT 硅模块 电子元件

Width: 61.4 mm

Height: 30.9 mm

Length: 106.4 mm

Technology: Si

Unit Weight: 340 g

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.95 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 3.2 V

Continuous Collector Current at 25 C: 370 A