Infineon FF300R12ME7B11BPSA1 IGBT 硅模块 1200 V，300 A 双IGBT模块

Technology: Si

Configuration: Dual

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 300 A