Infineon FF300R17ME4PB11BPSA1 IGBT晶体管 1700 V，300 A 双IGBT模块

Technology: Si

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 20 mW

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 1.95 V

Continuous Collector Current at 25 C: 300 A