Infineon FF600R06ME3 IGBT模块 IGBT 600V 600A
制造商Infineon(查看更多该品牌的产品)
ModelFF600R06ME3
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Technology: Si
Unit Weight: 345 g
Configuration: Dual
Mounting Style: Screw Mount
Pd - Power Dissipation: 1.65 kW
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.45 V
Continuous Collector Current at 25 C: 700 A
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