Infineon FP100R12KT4PBPSA1 IGBT 硅模块 1200 V，100 A 三相 PIM

Technology: Si

Configuration: 3-Phase Inverter

Pd - Power Dissipation: 515 W

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 100 A