Infineon FP10R12W1T4PB11BPSA1 IGBT 硅模块 1200 V, 10 A PIM IGBT 模块

Technology: Si

Unit Weight: 24 g

REACH - SVHC: Details

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 10 A