Infineon FP150R07N3E4_B11 IGBT模块 IGBT模块 150A 650V
制造商Infineon(查看更多该品牌的产品)
ModelFP150R07N3E4_B11
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Technology: Si
Unit Weight: 300 g
REACH - SVHC: Details
Configuration: 3-Phase Inverter
Pd - Power Dissipation: 430 W
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.55 V
Continuous Collector Current at 25 C: 150 A
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