Infineon FP15R12YT3 IGBT 硅模块 N-CH 1.2KV 25A

Width: 45.6 mm

Height: 12 mm

Length: 55.9 mm

Technology: Si

Unit Weight: 130 g

Configuration: 3-Phase Inverter

Mounting Style: Screw Mount

Pd - Power Dissipation: 105 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 25 A