Infineon FS200R12PT4PBOSA1 IGBT 硅模块 1200 V，200 A 六片装 IGBT 模块

Width: 103 mm

Height: 20.55 mm

Length: 130 mm

Technology: Si

Unit Weight: 400 g

Configuration: 6-Pack

Mounting Style: Screw Mount

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 200 A